Ferromagnetic FeSe: Structural, electrical, and magnetic properties

被引：61

作者：

Feng, QJ ^{[1
]}

Shen, DZ

Zhang, JY

Li, BS

Li, BH

Lu, YM

Fan, XW

Liang, HW

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China

[3] Dalian Univ Technol, Dept Phys, Dalian 116023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2159561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FeSe thin films were grown on GaAs (001) substrates using low-pressure metalorganic chemical vapor deposition. X-ray diffraction analysis showed that FeSe thin films were in tetragonal structure with (002) orientation. It was found that the FeSe thin films were ferromagnetic above room temperature, revealing a maximum saturation magnetization about 590 emu/cc along the in-plane magnetic easy axis. The Hall measurement indicated that the as grown FeSe thin films was of p-type conduction with hole concentration of as high as 10(20)similar to 10(21) cm(-3). The magnetic circular dichroism spectrum was employed to study the electronic structure. (c) 2006 American Institute of Physics.

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页数：3

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