High oriented FeSe thin film on GaAs(100) substrate prepared by low-pressure metalorganic chemical vapor deposition

被引：20

作者：

Feng, QJ ^{[1
]}

Shen, DZ ^{[1
]}

Zhang, JY ^{[1
]}

Shan, CX ^{[1
]}

Lu, YM ^{[1
]}

Liu, YC ^{[1
]}

Fan, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 279卷 / 2-3期

基金：

中国国家自然科学基金;

关键词：

LP-MOCVD; FeSe thin film; unitary orientation;

D O I：

10.1016/j.jmmm.2004.02.030

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

High oriented FeSe thin films have been grown on GaAs(l 00) substrate at temperature 320degreesC using low-pressure metalorganic chemical vapor deposition equipment. X-ray diffraction analysis showed that high oriented FeSe thin films with the tetragonal structure were obtained. Atomic molar ratio of Fe/Se is about 1:1 by the measurement of energy dispersive spectrometer in SEM and both of Fe 2p and Se 3d binding energy were obtained by X-ray photoelectron spectroscopy. Moreover, images of atomic force microscopy reveal a surface morphology consisting of about 130 nm uniform granular film. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：435 / 439

页数：5

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