Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

被引：21

作者：

Berry, JJ

Chun, SH

Ku, KC

Samarth, N

Malajovich, I

Awschalom, DD

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1328373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the ((1) over bar 101)MnAs and (001) ZnSe planes are parallel. Single-phase type-B alpha MnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01248-1].

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页码：3812 / 3814

页数：3

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