Structural stability of hydrogen forming gas annealed (Ba,Sr)RUO3 oxide electrodes

被引：1

作者：

Choi, ES ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 03期

关键词：

D O I：

10.1149/1.1450064

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Ba,Sr)RuO3 (BSR) electrodes were deposited onto Si(100) substrates by liquid delivery metallorganic chemical vapor deposition and investigated for stability under hydrogen forming condition. The BSR Films showed structural and morphological stability in hydrogen forming gas (4% H-2/balance N-2) anneal up to 500degreesC. The abrupt increase of resistivity with increasing hydrogen anneal temperature was attributed to the oxygen loss in BSR films without phase change and was completely recovered by annealing at 700degreesC in O-2 ambient. The BSR electrodes, with structural and morphological stability in hydrogen forming gas anneal conditions at high temperature, are suitable for integration of high dielectric constant materials. (C) 2002 The Electrochemical Society.

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页码：F1 / F3

页数：3

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