Chemiresistive gas sensing properties of nanocrystalline Co3O4 thin films

被引：74

作者：

Balouria, Vishal ^{[1
,2
]}

Samanta, S. ^{[1
]}

Singh, A. ^{[1
]}

Debnath, A. K. ^{[1
]}

Mahajan, Aman ^{[2
]}

Bedi, R. K. ^{[2
]}

Aswal, D. K. ^{[1
]}

Gupta, S. K. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys Div, Bombay 400085, Maharashtra, India

[2] Guru Nanak Dev Univ, Dept Phys, Amritsar 143005, Punjab, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2013年 / 176卷

关键词：

Co3O4 thin films; Gas sensing; XPS; Adsorbed oxygen; H2S; SENSORS; MICROSTRUCTURE; SELECTIVITY; CHLORINE; BEHAVIOR;

D O I：

10.1016/j.snb.2012.08.064

中图分类号：

O65 [分析化学];

学科分类号：

070302 [分析化学];

摘要：

The chemiresistive gas sensing characteristics of Co3O4 thin films - prepared by electron-beam deposition of Co films on (0 0 0 1) Al2O3 substrate followed by oxygen annealing at three different temperatures (500 degrees C, 650 degrees C and 800 degrees C) - have been investigated for a host of gases (C2H5OH, CO, NO, Cl-2, NH3 and H2S). The results of atomic force microscopy and X-ray diffraction revealed that the grains of these films are composed of nano-crystallites (size: 24-56 nm). X-ray photoelectron spectroscopy data revealed that the content of adsorbed oxygen decreases with increasing annealing temperature. For H2S gas in the concentration range 1-100 ppm, films annealed at 650 degrees C exhibited high selectivity, low base line drift and highest response, which are attributed to small crystallite size, improved crystallinity, better grain-to-grain connectivity and higher adsorbed oxygen content. The H2S sensing mechanism has been explained on the basis of the depletion of chemisorbed oxygen at the film surface. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：38 / 45

页数：8

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