Characterization of metallic impurities in Si using a recombination-lifetime correlation method

被引：21

作者：

Itsumi, M ^{[1
]}

Sato, Y ^{[1
]}

Imai, K ^{[1
]}

Yabumoto, N ^{[1
]}

机构：

[1] NTT ADV TECHNOL CORP, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.365632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Correlation between p-type and n-type Si recombination lifetimes enables us to roughly but rapidly predict the isolation of iron, copper, and stainless-steel components. We examine this correlation method in detail and show that the ratio of p-type Si and n-type Si lifetimes is not 1:1 but 0.67:1 for iron and 1:0.67 for copper. Some kind of precipitates may be responsible for these ratios. The advantages of the correlation method are quantitatively demonstrated for wafer cleaning, furnace processes, and plasma etching processes. (C) 1997 American Institute of Physics.

引用

页码：3250 / 3255

页数：6

共 19 条

[1]

AKIYAMA K, 1991, 38 SPRING M 1991 TOK, P314

[2]

ATSUMI J, 1989, ELECTROCHEM SOC, V909, P59

[3]

GAO X, 1994, FALL M EL SOC, V942, P627

[4]

GILLES D, 1990, FALL M EL SOC, V901, P396