RECOVERY OF RECOMBINATION LIFETIME BY POURING DEIONIZED WATER ONTO A ROTATING PLASMA-DAMAGED WAFER

被引:6
作者
ITSUMI, M
AOYAMA, S
机构
[1] LSI Laboratories, NTT, Atsugi-Shi
关键词
D O I
10.1063/1.356513
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pouring de-ionized water onto a rotating wafer increases the recombination lifetime reduced by with plasma-induced damage, and this increase is greatest in the central region of the wafer. This recovery. is observed with p-type Si and n -type Si substrates and with dry oxides and wet oxides. Electrostatic measurements reveal that the water induces negative charges on a wafer and that the amount of charge increases with increasing rotation speed. Capacitance-voltage analysis indicates that negative charge builds up in the oxides and that interface states are generated at the Si-SiO2 interface. A model is proposed in which electrons produced through the friction between the water and the SiO2 surface play an important role in the recovery of the recombination lifetime.
引用
收藏
页码:8153 / 8157
页数:5
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