Germanium nanostructures deposited by the cluster-beam evaporation technique

被引：9

作者：

Nozaki, S ^{[1
]}

Sato, S ^{[1
]}

Ono, H ^{[1
]}

Morisaki, H ^{[1
]}

Iwase, M ^{[1
]}

机构：

[1] TOKAI UNIV,DEPT ELECT ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 121卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00376-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Ge nanostructures were deposited on substrates whose temperature was kept at room or liquid nitrogen (LN(2)) temperature by the cluster-beam evaporation technique. The deposited film is found to consist of the tetragonal crystalline structure, not the diamond structure in bulk Ge. Such a phase transition is theoretically predicted for sizes smaller than 4 nm, which agrees with the sizes measured by the transmission electron microscopy (TEM). The Ge film deposited at LN(2) temperature exhibits unique properties such as photo-oxidation and blue-light emission.

引用

页码：455 / 458

页数：4

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