Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

被引：31

作者：

Fan, WJ ^{[1
]}

Abiyasa, AP

Tan, ST

Yu, SF

Sun, XW

Xia, JB

Yeo, YC

Li, MF

Chong, TC

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 01期

关键词：

computer simulation; low dimensional structures; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2005.10.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：28 / 33

页数：6

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