High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7-δ metalorganic chemical vapor deposited thin films

被引：11

作者：

Grigis, C ^{[1
]}

Schamm, S ^{[1
]}

Dorignac, D ^{[1
]}

机构：

[1] CNRS, Ctr Elaborat Mat & Etud Struct, CEMES, F-31055 Toulouse 04, France

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 07期

关键词：

D O I：

10.1557/JMR.1999.0366

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New structural planar defects in Ba-deficient Y1Ba2Cu3O7-delta (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO "1:2:3" stacking sequences along the c direction which give rise to structural variants with locally "2:5:7," "3:4:7," or "4:6:10" cationic stoichiometries. The defects can be consistently interpreted as CuO-YO-CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

引用

页码：2732 / 2738

页数：7

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