Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

The temperature and gate length effects on dc performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on AlN/SiC templates or sapphire substrates are reported. The defect density in the structures grown on the AlN/SiC template is significantly lower than those grown on sapphire, as measured by transmission electron microscopy. Reverse breakdown voltages above 40 V were obtained for 0.25 mum gate length devices on both types of substrate. Extrinsic transconductances of similar to200 mS/mm for HEMTs on sapphire and similar to125 mS/mm for devices on AlN/ SiC were achieved, with the latter devices showing significantly lower self-heating effects. Both types of HEMTs showed similar trends of drain current and transconductance with increasing temperature. There was a clear signature of optical phonon scattering as the dominant scattering mechanism from room temperature to 300 degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.