Short-channel effects in AlGAN/GaN HEMTs

被引：30

作者：

Breitschädel, O ^{[1
]}

Kley, L ^{[1
]}

Gräbeldinger, H ^{[1
]}

Hsieh, JT ^{[1
]}

Kuhn, B ^{[1
]}

Scholz, F ^{[1
]}

Schweizer, H ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

AlGaN/GaN heterostructures; HEMTs; short-channel effects;

D O I：

10.1016/S0921-5107(00)00747-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on our progress on the fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 mum down to 60 nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but also shows short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：238 / 240

页数：3

共 6 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2]

EASTMAN L, 1997, MRS INTERNET J SEMIC, V2

[3]

EDGAR JH, 1999, GALLIUM NITRIDE RELA

[4] Scaling of gate length in ultra-short channel heterostructure field effect transistors [J].

Han, J ;

Ferry, DK .

SOLID-STATE ELECTRONICS, 1999, 43 (02) :335-341

[5]

HSIEH JT, IN PRESS

[6] DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates [J].

Ping, AT ;

Chen, Q ;

Yang, JW ;

Khan, MA ;

Adesida, I .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) :54-56

← 1 →