Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引:37
作者
Hsu, L [1 ]
Walukiewicz, W
机构
[1] Carnegie Mellon Univ, Ctr Innovat Learning, Pittsburgh, PA 15213 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.123897
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have calculated hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures. Although substantial p-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10(12) cm(-2) and with low-temperature mobilities in excess of 10(4) cm(2)/V s. (C) 1999 American Institute of Physics. [S0003-6951(99)01717-9].
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页码:2405 / 2407
页数:3
相关论文
共 14 条
[1]  
GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330
[2]   IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611
[3]   Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1-xN interfaces [J].
Hsu, L ;
Walukiewicz, W .
APPLIED PHYSICS LETTERS, 1998, 73 (03) :339-341
[4]   Electron mobility in AlxGa1-xN/GaN heterostructures [J].
Hsu, L ;
Walukiewicz, W .
PHYSICAL REVIEW B, 1997, 56 (03) :1520-1528
[5]  
KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775
[6]   Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors [J].
Oberhuber, R ;
Zandler, G ;
Vogl, P .
APPLIED PHYSICS LETTERS, 1998, 73 (06) :818-820
[7]   Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates [J].
Redwing, JM ;
Tischler, MA ;
Flynn, JS ;
Elhamri, S ;
Ahoujja, M ;
Newrock, RS ;
Mitchel, WC .
APPLIED PHYSICS LETTERS, 1996, 69 (07) :963-965
[8]   p-type δ-doping quantum wells and superlattices in Si:: Self-consistent hole potentials and band structures [J].
Rosa, AL ;
Scolfaro, LMR ;
Enderlein, R ;
Sipahi, GM ;
Leite, JR .
PHYSICAL REVIEW B, 1998, 58 (23) :15675-15687
[9]   Reconstructions of the GaN(000(1)over-bar) surface [J].
Smith, AR ;
Feenstra, RM ;
Greve, DW ;
Neugebauer, J ;
Northrup, JE .
PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3934-3937
[10]  
STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643