Reconstructions of the GaN(000(1)over-bar) surface

被引:326
作者
Smith, AR
Feenstra, RM
Greve, DW
Neugebauer, J
Northrup, JE
机构
[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213
[2] MAX PLANCK GESELL,FRITZ HABER INST,D-14195 BERLIN,GERMANY
[3] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1103/PhysRevLett.79.3934
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Reconstructions of the GaN(0001) surface are studied for the first time. Using scanning tunneling microscopy and reflection high-energy electron diffraction, four primary structures are observed: 1 x 1, 3 x 3, 6 x 6, and c(6 x 12). On the basis of first-principles calculations, the 1 x 1 structure is shown to consist of a Ga monolayer bonded to a N-terminated GaN bilayer. From a combination of experiment and theory, it is argued that the 3 x 3 structure is an adatom-on-adlayer structure with one additional Ga atom per 3 x 3 unit cell.
引用
收藏
页码:3934 / 3937
页数:4
相关论文
共 15 条
  • [1] Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
    Daudin, B
    Rouviere, JL
    Arlery, M
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2480 - 2482
  • [2] SURFACE-DIFFUSION AND PHASE-TRANSITION ON THE GE(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY
    FEENSTRA, RM
    SLAVIN, AJ
    HELD, GA
    LUTZ, MA
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (25) : 3257 - 3260
  • [3] Monitoring surface stoichiometry with the (2x2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
    Hacke, P
    Feuillet, G
    Okumura, H
    Yoshida, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2507 - 2509
  • [4] In situ control of GaN growth by molecular beam epitaxy
    Held, R
    Crawford, DE
    Johnston, AM
    Dabiran, AM
    Cohen, PI
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 272 - 280
  • [5] HU CM, IN PRESS
  • [6] MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN/SIC SUBSTRATES
    HUGHES, WC
    ROWLAND, WH
    JOHNSON, MAL
    FUJITA, S
    COOK, JW
    SCHETZINA, JF
    REN, J
    EDMOND, JA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1571 - 1577
  • [7] High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2x2) and (4x4) reflection high energy electron diffraction patterns
    Iwata, K
    Asahi, H
    Yu, SJ
    Asami, K
    Fujita, H
    Fushida, M
    Gonda, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (3A): : L289 - L292
  • [8] GAN GROWN ON HYDROGEN PLASMA CLEANED 6H-SIC SUBSTRATES
    LIN, ME
    STRITE, S
    AGARWAL, A
    SALVADOR, A
    ZHOU, GL
    TERAGUCHI, N
    ROCKETT, A
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (07) : 702 - 704
  • [9] NON-LINEAR IONIC PSEUDOPOTENTIALS IN SPIN-DENSITY-FUNCTIONAL CALCULATIONS
    LOUIE, SG
    FROYEN, S
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1738 - 1742
  • [10] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (13) : 1687 - 1689