Single electron device with asymmetric tunnel barriers

A single electron device with asymmetric tunnel barriers (ATBs) is proposed, and its operation simulated by computer. Current in the ATB structure is dominated by Fowler-Nordheim tunneling while that in a conventional symmetric tunnel barrier (STB) structure is determined by direct tunneling. Consequently, the ATB has two remarkable advantages over STB. First, the tunnel resistance of ATB depends on the energy of tunneling electron and is determined independently of the barrier capacitance. Second, the tunneling oi electrons becomes almost unilateral in ATB and bilateral in STB. These advantages of ATB make it easier to fabricate single electron circuits with high speed, high temperature and low power consumption.