Correlation between surface microroughness of silicon oxide film and SiO2/Si interface structure

被引：31

作者：

Ohashi, M

Hattori, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 4A期

关键词：

microroughness; SiO2/Si interface; X-ray photoelectron spectroscopy; atomic force microscope; oxidation reaction; layer-by-layer oxidation; protrusion;

D O I：

10.1143/JJAP.36.L397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found, from combined measurements of the surface microroughness of silicon oxide film and the SiO2/Si intel face structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structures. Therefore, the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.

引用

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页码：L397 / L399

页数：3

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