Low temperature activation of Mg-doped GaN in O2 ambient

被引：53

作者：

Kuo, CH

Chang, SJ

Su, YK

Wu, LW

Sheu, JK

Chen, CH

Chi, GC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 2A期

关键词：

InGaN/GaN; Mg activation; oxygen; PL; Hall measurement;

D O I：

10.1143/JJAP.41.L112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O-2 air and N-2. It was found that we could achieve a low-resistive p-type GaN by O-2-ambient annealing at a temperature as low as 400degreesC. The resistivity and hole concentration of the 400degreesC O-2-ambient annealed Mg-doped GaN was 2 Omega-cm and 3 x 10(17)cm(-3), respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N-2 ambient at 700degreesC.

引用

页码：L112 / L114

页数：3

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