Scanning gate measurements on a quantum wire

被引：12

作者：

Ihn, T ^{[1
]}

Rychen, J

Cilento, T

Held, R

Ensslin, K

Wegscheider, W

Bichler, M

机构：

[1] ETH Honggerberg, ETH Zurich, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[2] Univ Regensburg, D-8400 Regensburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期

关键词：

scanning probe techniques; quantum wires; phase coherence effects;

D O I：

10.1016/S1386-9477(01)00379-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have performed measurements on a semiconductor quantum wire in which we induce a local potential perturbation with the metallic tip of a scanning force microscope. Measurement of the sample resistance as a function of tip position results in an electrical map of the wire in real space. We find the fingerprint of potential fluctuations in the wire which appear as local resistance fluctuations in the images. In a local transconductance measurement we observe small oscillations on the scale of the Fermi-wavelength of electrons which may arise from interference of electron waves. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：691 / 694

页数：4

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