Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane

被引：36

作者：

Lin, PJ ^{[1
]}

Chen, MC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 08期

关键词：

Cu(hfac)VTMS; copper; LPCVD; resistivity; microstructure;

D O I：

10.1143/JJAP.38.4863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.

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收藏

页码：4863 / 4867

页数：5

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