Determination of acid diffusion and energy deposition parameters by point e-beam exposure in chemically amplified resists

被引：15

作者：

Raptis, I

Grella, L

Argitis, P

Gentili, M

Glezos, N

Petrocco, G

机构：

[1] Ist. Elettron. dello Stato S., CNR, I-00156 Rome

[2] Institute of Microelectronics (IMEL), NCSR DEMOKRITOS

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00249-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for the measurement of acid diffusion in chemically amplified resists is introduced. It is based on the measurement of the diameter of lithographic features (pillars for negative resists) obtained from single pixel e-beam exposures to determine the proximity function in a wide range of doses and FEB times. The method is applied in the measurement of the diffusion coefficients of two negative chemically amplified resists, the commercial resist SAL-601 (Shipley) and a prototype epoxy novolac based resist (EPR) developed at IMEL. The method directly provides proximity effect correction parameters for chemically amplified resists.

引用

页码：295 / 299

页数：5

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