Growth, disorder, and physical properties of ZnSnN2

被引：112

作者：

Feldberg, N. ^{[1
]}

Aldous, J. D. ^{[1
]}

Linhart, W. M. ^{[2
,3
]}

Phillips, L. J. ^{[2
,3
]}

Durose, K. ^{[2
,3
]}

Stampe, P. A. ^{[4
]}

Kennedy, R. J. ^{[4
]}

Scanlon, D. O. ^{[5
]}

Vardar, G. ^{[6
]}

Field, R. L., III ^{[6
]}

Jen, T. Y. ^{[6
]}

Goldman, R. S. ^{[6
]}

Veal, T. D. ^{[2
,3
]}

Durbin, S. M. ^{[1
,7
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England

[3] Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England

[4] Florida A&M Univ, Dept Phys, Tallahassee, FL 32307 USA

[5] UCL, Dept Chem, London WC1H 0AJ, England

[6] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[7] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

基金：

美国国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

ZNGEN2; DYNAMICS; ZNSIN2; FILMS;

D O I：

10.1063/1.4816438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine ZnSnN2, a member of the class of materials contemporarily termed "earth-abundant element semiconductors," with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 35 条

[21] Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN [J].