Electronic passivation of Si(111) by Ga-Se half-sheet termination

被引：16

作者：

Fritsche, R

Wisotzki, E

Islam, ABMO

Thissen, A

Klein, A

Jaegermann, W

Rudolph, R

Tonti, D

Pettenkofer, C

机构：

[1] TH Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany

[2] Hahn Meitner Inst Berlin GmbH, Dept Solar Energy, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1454228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7X7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1X1 : GaSe surface remains with electronic surface potentials near flatband condition. (C) 2002 American Institute of Physics.

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页码：1388 / 1390

页数：3

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