Quantum defect approach for the effect of electron-phonon coupling on impurity recombination in semiconductors

被引：21

作者：

Gurskii, AL ^{[1
]}

Voitikov, SV ^{[1
]}

机构：

[1] Natl Acad Sci, Inst Phys, Minsk 220030, BELARUS

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 06期

关键词：

impurities in semiconductors; electron-phonon interactions; electronic states (localized); luminescence;

D O I：

10.1016/S0038-1098(99)00354-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recombination via impurity states in wide gap semiconductors affected by charge-phonon coupling has been investigated and modeled in the framework of the quantum defect approach. The Huang-Rhys factor being a measure of electron phonon interaction has been calculated for free-to-acceptor and donor-acceptor recombination involving impurity centers with arbitrary ionization energies. The calculations have been performed for ZnSe. The model permits adequate describing of impurity recombination band shape in doped ZnSe. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：339 / 343

页数：5

共 21 条

[1] PHOTOLUMINESCENCE SPECTRA OF OXYGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].