MODIFIED DONOR-ACCEPTOR PAIR LUMINESCENCE IN HEAVILY NITROGEN-DOPED ZINC SELENIDE

被引：26

作者：

KOTHANDARAMAN, C ^{[1
]}

NEUMARK, GF ^{[1
]}

PARK, RM ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.115229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The luminescence from heavily doped ZnSe:N shows a deep broadband whose position was found to depend strongly on the excitation intensity and sample temperature. The peak was found to shift towards higher energies with increasing intensity, but in contrast to the standard donor-acceptor pair (DAP) model, shifted towards lower energies with increasing temperatures. This behavior is explained using a modified DAP model that takes into account the perturbations of the band and impurity states caused by fluctuations in the concentrations of the ionized impurities. This model led to an estimate of 2.52 eV for the PL peak, with a width of 140 meV, for the case of low temperature and low excitation intensity, in rough agreement with our observations. The effect of these fluctuations on film conductivity is also discussed. (C) 1995 American Institute of Physics.

引用

页码：3307 / 3309

页数：3

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