COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE

被引：185

作者：

HAUKSSON, IS ^{[1
]}

SIMPSON, J ^{[1
]}

WANG, SY ^{[1
]}

PRIOR, KA ^{[1
]}

CAVENETT, BC ^{[1
]}

机构：

[1] ACAD SINICA,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 18期

关键词：

D O I：

10.1063/1.108296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor-acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (V(Se)-Zn-N(Se)) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.

引用

页码：2208 / 2210

页数：3

共 8 条

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[6] N-TYPE DOPING OF MOLECULAR-BEAM EPITAXIAL ZINC SELENIDE USING AN ELECTROCHEMICAL IODINE CELL
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[7] UV LASER ASSISTED GROWTH OF MOLECULAR-BEAM EPITAXIAL ZNSE
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[8] WANG SY, 1990, APPL PHYS LETT, V60, P344

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