UV LASER ASSISTED GROWTH OF MOLECULAR-BEAM EPITAXIAL ZNSE

被引：15

作者：

SIMPSON, J

ADAMS, SJA

WANG, SY

WALLACE, JM

PRIOR, KA

CAVENETT, BC

机构：

[1] Department of Physics, Heriot Watt University, Riccarton, Edinburgh

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90731-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photo-assisted molecular beam epitaxy of ZnSe on GaAs substrates with UV irradiation is reported. The growth rate is observed to be a function of the layer thickness and at high UV levels growth can be totally supressed. Photo-assisted doping has been investigated for the first time in ZnSe and changes of up to 20 x in the doping level are reported for iodine, n-type doped material. The results are discussed in terms of hole accumulation at the surface affecting the incorporation of selenium and iodine.

引用

页码：134 / 138

页数：5

共 15 条

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