LASER IRRADIATION DURING MBE GROWTH OF ZNSXSE1-X - A NEW GROWTH PARAMETER

被引：28

作者：

MATSUMURA, N

FUKADA, T

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Epilayers; -; Excitons;

D O I：

10.1016/0022-0248(90)90937-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of light irradiation of a He-Cd laser (441.6 nm) on MBE growth of ZnSxSe1-x (x=0-0.13) were studied. The growth rates of the epilayers were reduced and the photo-desorption rate constanSts of Zn, Se and S were obtained. In the photoluminescence spectra at 11 K, the intensities of the free exciton emission increased, and thus the crystallinity of the epilayers was found to be improved. The behavior of surface adatoms on the growing surface under laser irradiation is discussed. © 1989.

引用

页码：61 / 66

页数：6

共 8 条

[1] PARTIAL PRESSURE OF SE2 AND OPTICAL DENSITY OF SELENIUM VAPOR IN VISIBLE AND ULTRAVIOLET
BREBRICK, RF
[J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (09) : 3031 - &
[2] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES
MATSUMURA, N
TSUBOKURA, M
SARAIE, J
YODOGAWA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 311 - 317
[3] MATSUMURA N, 1986, TECH REPT I ELECTRON, V85, P59
[4] MATSUMURA N, IN PRESS
[5] PHOTO-ASSISTED MBE GROWTH OF ZNSE CRYSTALS
OHISHI, M
SAITO, H
OKANO, H
OHMORI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 538 - 542
[6] OKABE H, 1978, PHOTOCHEMISTRY SMALL, P184
[7] CW LASER-INDUCED LOW-TEMPERATURE DECOMPOSITION OF CDTE CRYSTALS
UZAN, C
LEGROS, R
MARFAING, Y
TRIBOULET, R
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 879 - 880
[8] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
OGURA, M
MATSUOKA, S
MORISHITA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501

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