MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES

被引：32

作者：

MATSUMURA, N

TSUBOKURA, M

SARAIE, J

YODOGAWA, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90735-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：311 / 317

页数：7

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[10] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
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