Densities of Si determined by an image digitizing technique in combination with an electrostatic levitator

被引:44
作者
Ohsaka, K [1 ]
Chung, SK [1 ]
Rhim, WK [1 ]
Holzer, JC [1 ]
机构
[1] MEMC ELECT MAT INC,ST PETERS,MO 63376
关键词
D O I
10.1063/1.118317
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have determined the densities of Si in the liquid, rho(l)(T), and solid, rho(s)(T), states as a function of temperature, T, by employing an image digitizing technique and numerical calculation methods in combination with an electrostatic levitator. The obtained density data can be fitted with the following equations: rho(l)(T) = rho(l)(T-m) - 1.71 x 10(-4)(T-T-m) - 1.61 x 10(-7)(T- T-m)(2)(g/cm(3)); rho(s)(T) = rho(s)(T-m) - 2.63 x 10(-5)(T- T-m)(g/cm(3)), where T-m is the melting point, 1687 K, and rho(l)(T-m) and rho(s)(T-m) are 2.580 and 2.311 (g/cm(3)), respectively. The error involved in the determination is estimated to be +/- 0.006 (g/cm(3)). The rho(l)(T) value smoothly varies through T-m and does not indicate a reported anomalous density variation. The rho(l)(T-m) value is 2% larger than the literature value and the coefficient of the linear temperature dependence is approximately half of a reported value. The rho(s)(T-m) value closely agrees with the literature value. (C) 1997 American Institute of Physics.
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页码:423 / 425
页数:3
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