An adjustable work function technology using Mo gate for CMOS devices

被引：142

作者：

Lin, R ^{[1
]}

Lu, Q

Ranade, P

King, TJ

Hu, CM

机构：

[1] PDF Solut, San Jose, CA 95110 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

CMOS; gate implantation; metal gate; molybdenum; MOSFET; work function;

D O I：

10.1109/55.974809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrogen implantation of Mo gate was used to fabricate MOS capacitors and CMOS transistors. Initial studies demonstrate that the work function of Mo is sensitive to nitrogen implantation energy. Mo with (110) orientation exhibits a high work function, making it suitable for bulk p-MOSFET gate electrodes. Nitrogen implantation can be used to lower the Mo work function, making it suitable for n-MOSFET gate electrodes. A gate work function reduction of 0.42 eV was achieved for the n-FETs on CMOS wafers. With further optimization, this single metal gate technology may potentially replace conventional poly-Si gate technology for CMOS and can also be used for multiple-V-T technologies.

引用

页码：49 / 51

页数：3