Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

被引：12

作者：

Kaczer, B ^{[1
]}

Degraeve, R ^{[1
]}

De Keersgieter, A ^{[1
]}

Van de Mieroop, K ^{[1
]}

Bearda, T ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934979

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically based model and an equivalent circuit for a hard-broken nFET are given.

引用

页码：121 / 122

页数：2

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