Impact of MOSFET oxide breakdown on digital circuit operation and reliability

被引：95

作者：

Kaczer, B ^{[1
]}

Degraeve, R ^{[1
]}

Groeseneken, G ^{[1
]}

Rasras, M ^{[1
]}

Kubicek, S ^{[1
]}

Vandamme, E ^{[1
]}

Badenes, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that many gate oxide breakdowns can occur in parts of a digital circuit without affecting its overall logical function. This implies that if maintaining the circuit's logical functionality is the sufficient reliability criterion, the present reliability specifications are excessively stringent.

引用

页码：553 / 556

页数：4

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