Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility

被引：97

作者：

Kuzum, Duygu ^{[1
]}

Pethe, Abhijit J. ^{[1
]}

Krishnamohan, Tejas ^{[1
]}

Oshima, Yasuhiro ^{[1
]}

Sun, Yuri ^{[1
]}

McVittie, Jim P. ^{[1
]}

Pianetta, Piero A. ^{[1
]}

McIntyre, Paul C. ^{[1
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The highest electron mobility to-date in Ge is reported. For the first time, the effect of surface orientation on mobility is investigated experimentally, Carrier scattering mechanisms are studied through low temperature mobility measurements. Ozone-oxidation has been introduced to engineer Ge/insulator interface. Minimum density of interface states (D(it)) of 3x10(11) cm(-2) V(-1) is demonstrated and D(it) across the bandgap is extracted.

引用

页码：723 / 726

页数：4

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