Electrical characterization of germanium p-channel MOSFETs

被引：152

作者：

Shang, H ^{[1
]}

Okorn-Schimdt, H ^{[1
]}

Ott, J ^{[1
]}

Kozlowski, P ^{[1
]}

Steen, S ^{[1
]}

Jones, EC ^{[1
]}

Wong, HSP ^{[1
]}

Hanesch, W ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 04期

关键词：

germanium; germanium oxynitride; mobility; MOSFET;

D O I：

10.1109/LED.2003.810879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and low-temperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2x higher transconductance and similar to 40% hole mobility enhancement over the Si control with a thermal SiO2 gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.

引用

页码：242 / 244

页数：3

共 9 条

[1]

Chui C., 2002, IEEE 60 DRC JUN, P191

[2] High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition [J].

Höck, G ;

Kohn, E ;

Rosenblad, C ;

von Känel, H ;

Herzog, HJ ;

König, U .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3920-3922

[3] GATE-SELF-ALIGNED P-CHANNEL GERMANIUM MISFETS [J].

JACKSON, TN ;

RANSOM, CM ;

DEGELORMO, JF .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :605-607

[4] Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates [J].

Lee, ML ;

Leitz, CW ;

Cheng, Z ;

Pitera, AJ ;

Langdo, T ;

Currie, MT ;

Taraschi, G ;

Fitzgerald, EA ;

Antoniadis, DA .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3344-3346

[5]

REINKING D, 1999, P ESSDERC, P300

[6] Strained SiNMOSFETs for high performance CMOS technology [J].

Rim, K ;

Koester, S ;

Hargrove, M ;

Chu, J ;

Mooney, PM ;

Ott, J ;

Kanarsky, T ;

Ronsheim, P ;

Ieong, M ;

Grill, A ;

Wong, HSP .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :59-60

[7] Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs [J].

Rim, K ;

Chu, J ;

Chen, H ;

Jenkins, KA ;

Kanarsky, T ;

Lee, K ;

Mocuta, A ;

Zhu, H ;

Roy, R ;

Newbury, J ;

Ott, J ;

Petrarca, K ;

Mooney, P ;

Lacey, D ;

Koester, S ;

Chan, K ;

Boyd, D ;

Leong, M ;

Wong, HS .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :98-99

[8]

SZE SM, PHYSICS SEMICONDUCTO, P850

[9] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION [J].

TAKAGI, S ;

TORIUMI, A ;

IWASE, M ;

TANGO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2357-2362

← 1 →