Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

被引：2

作者：

Medjdoub, F ^{[1
]}

Dessenne, F ^{[1
]}

Thobel, JL ^{[1
]}

Zaknoune, M ^{[1
]}

Theron, D ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, Dept Hyperfrequences & Semiconducteurs, F-59652 Villeneuve Dascq, France

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 05期

关键词：

Monte Carlo simulation; semiconductor devices; ohmic contacts; boundary conditions; heterojunctions;

D O I：

10.1016/j.sse.2003.09.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced by BC, especially in the case of submicron gate lengths. Standard models prescribe a neutrally charged region and are inconsistent with the presence of heterojunctions. This may lead to dramatically unphysical effects. An alternative is proposed where an equilibrium density profile is self-consistently calculated and serves as BC. The comparison of our new model with the former one has been performed and we have used experimental structures to optimise the model parameters. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：683 / 688

页数：6

共 21 条

[1] Simple approach to include external resistances in the Monte Carlo simulation of MESFET's and HEMT's [J].