PERFORMANCES EVALUATION OF PbTiO3 GATED METAL/INSULATOR/SEMICONDUCTOR SWITCH DIODE FOR ROOM-TEMPERATURE HIGH SENSITIVITY INFRARED SENSOR

被引：2

作者：

Chen, F. Y. ^{[1
]}

Fang, Y. K. ^{[1
]}

Shu, C. Y. ^{[1
]}

Chen, Jiann-Ruey ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, Tainan 70101, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

FERROELECTRICS | 1996年 / 182卷 / 01期

关键词：

D O I：

10.1080/00150199608216157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A PbTiO3 gated metal-SiO2-n-p(+) switch diode has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive layer is RF sputtered PbTiO3 ferroelectric thin film. At room temperature, typically, the switching voltage changes from the original value of 4.2 V to 3.625 V under only 50 mu w infrared light power. In addition, the current-voltage curves, the effect of infrared light power on switching voltage, and the effect of PbTiO3, thickness on switching voltage as well as operational mechanisms are reported in detail.

引用

页码：19 / 28

页数：10

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