SiGeBiCMOS technology with 3.0 ps gate delay

被引：12

作者：

Ruecker, H. ^{[1
]}

Heinemann, B. ^{[1
]}

Barth, R. ^{[1
]}

Bauer, J. ^{[1
]}

Blum, K. ^{[1
]}

Bolze, D. ^{[1
]}

Drews, J. ^{[1
]}

Fischer, G. G. ^{[1
]}

Fox, A. ^{[1
]}

Fursenko, O. ^{[1
]}

Grabolla, T. ^{[1
]}

Haak, U. ^{[1
]}

Hoeppner, W. ^{[1
]}

Knoll, D. ^{[1
]}

Koepke, K. ^{[1
]}

Kuck, B. ^{[1
]}

Mai, A. ^{[1
]}

Marschmeyer, S. ^{[1
]}

Morgenstern, T. ^{[1
]}

Richter, H. H. ^{[1
]}

Schley, P. ^{[1
]}

Schmidt, D. ^{[1
]}

Schulz, K. ^{[1
]}

Tillack, B. ^{[1
]}

Weidner, G. ^{[1
]}

Winkler, W. ^{[1
]}

Wolansky, D. ^{[1
]}

Wulf, H. E. ^{[1
]}

Yamamototo, Y. ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mu m(2). A minimum gate delay of 3.0 ps was achieved for CML ring oscillators. Breakdown voltages of the HBTs are measured to be BV(CEO)=1.8 V, BV(CBO)=5.6 V, and BV(EBO)=1.9 V.

引用

页码：651 / 654

页数：4