Electrical Characterization of Bismuth Sulfide Nanowire Arrays by Conductive Atomic Force Microscopy

被引：15

作者：

Birjukovs, Pavels ^{[1
,2
]}

Petkov, Nikolay ^{[4
,5
]}

Xu, Ju ^{[4
]}

Svirksts, Janis ^{[3
]}

Boland, John J. ^{[5
]}

Holmes, Justin D. ^{[4
,5
]}

Erts, Donats ^{[1
,2
]}

机构：

[1] Latvian State Univ, Inst Chem Phys, LV-1586 Riga, Latvia

[2] Latvian State Univ, Dept Chem, LV-1586 Riga, Latvia

[3] Natl Univ Ireland Univ Coll Cork, Dept Chem, Mat & Supercrit Fluids Grp, Cork, Ireland

[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[5] Univ Dublin Trinity Coll, Ctr Res Adapt Nanostruct & Nanodevices CRANN, Dublin 2, Ireland

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 49期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1021/jp805422k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new method for determining the resistivity of templated Bi2S3 nanowires by conductive atomic force (C-AFM) microscopy is described in this paper. Unlike other vertical C-AFM approaches, in our method, resistance measurements were carried out along the lengths of the nanowires. Nanowires embedded within anodic alumina membranes were exposed for contact by etching away the alumina template to form an open array of parallel nanowires. From these measurements, the contact resistance between the cold electrodes and the C-AFM probe could be determined and subtracted to give the intrinsic resistivity of the nanowires. The resistivity of the nanowires determined in such a horizontal configuration was 10-100 times lower than the resistivity determined when the same nanowires were contacted in a vertical configuration.

引用

页码：19680 / 19685

页数：6

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