A small-signal MOSFET model for radio frequency IC applications

被引：47

作者：

AbouAllam, E

Manku, T

机构：

[1] Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ont.

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1997年 / 16卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/43.631207

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we present a small-signal model for an integrated MOS transistor which takes into account the distributed nature of the gate structure. The y parameters are derived, as well as an equation for an equivalent current noise source at the output, The equivalent current noise source takes into account the thermal noise generated by the resistive gate, The modeling equations are of relatively simple form, allowing for easy implementation into a circuit simulation CAD tool, The model is particularly useful in the design of RF integrated circuits, The proposed model is verified using results obtained from HSPICE.

引用

页码：437 / 447

页数：11

共 8 条

[1] LOW-POWER RADIOFREQUENCY ICS FOR PORTABLE COMMUNICATIONS [J].