Large-Scale Assembly of Silicon Nanowire Network-Based Devices Using Conventional Microfabrication Facilities

被引：107

作者：

Heo, Kwang ^{[1
]}

Cho, Eunhee ^{[4
]}

Yang, Jee-Eun ^{[5
]}

Kim, Myoung-Ha ^{[6
]}

Lee, Minbaek ^{[2
]}

Lee, Byung Yang ^{[2
]}

Kwon, Soon Gu ^{[3
]}

Lee, Moon-Sook ^{[4
]}

Jo, Moon-Ho ^{[5
]}

Choi, Heon-Jin ^{[6
]}

Hyeon, Taeghwan ^{[3
]}

Hong, Seunghun ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Interdisciplinary Program Nanosci & Technol, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151747, South Korea

[4] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Gyeonggi Do 446711, South Korea

[5] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Gyungbuk 790784, South Korea

[6] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

NANO LETTERS | 2008年 / 8卷 / 12期

关键词：

D O I：

10.1021/nl802570m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized Si-NWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we, demonstrated transistors based on individual Si-NWs and long networks of Si-NWs.

引用

页码：4523 / 4527

页数：5

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