Topological coupling in spin valve type multilayers

被引:41
作者
Zhang, J
White, RM
机构
[1] Data Storage Systems Center, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh
基金
美国国家科学基金会;
关键词
D O I
10.1109/20.539101
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The origin and the effect of topological coupling induced by interfacial roughness in spin valve type multilayers have been investigated. The upper bound of the coupling field, which is scale invariant, is predicted by a simplified model using a uniform magnetization approximation. Macroscopic sandwich structures (''macrosteps'') of various complexity were fabricated to test these predictions. The coupling field was determined from the shift of the ''free layer'' B-H loop, or the difference in apparent coercivities. The dependence of the magnitude and the sign of the coupling on the characteristics of the roughness was measured. Implications for real spin valve films and devices are discussed, as well as the potential application of the ''macrosteps'', or artificial roughness, to provide desired coupling between films.
引用
收藏
页码:4630 / 4635
页数:6
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