Effects of gas flow on particle growth in silane RF discharges

被引：32

作者：

Matsuoka, Y ^{[1
]}

Shiratani, M

Fukuzawa, T

Watanabe, Y

Kim, KS

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect Device Engn, Fukuoka 8128581, Japan

[2] Kangweon Natl Univ, Dept Chem Engn, Chunchon 200701, Kangwon Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 7B期

关键词：

particle; silane; RF discharge; gas flow; laser light scattering;

D O I：

10.1143/JJAP.38.4556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of gas flow on particle growth in silane RF discharges in a plasma chemical vapor deposition (PCVD) reactor with a shower-type powered electrode are studied using an in situ two-dimensional polarization-sensitive laser-light-scattering method. Particle growth depends on both the production of short-lifetime radicals and the loss of neural clusters in the radical production region around the plasma/sheath boundary near the powered electrode. Gas now of a velocity above about 6 cm/s is effective in suppressing particle growth because of increase in loss of neutral clusters, Moreover, particles larger than 120 nm in size that flow to the plasma/sheath boundary near the grounded electrode are found to pass through the sheath. This implies that such particles may deposit on film surfaces for PCVD reactors with the shower-type powered electrode.

引用

页码：4556 / 4560

页数：5

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