Analysis of waveguide properties of organic semiconductor lasers

被引:4
作者
Barlow, GF [1 ]
Shore, KA [1 ]
机构
[1] Univ Wales, Bangor Sch Elect Engn & Comp Syst, Bangor LL57 1UT, Gwynedd, Wales
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1999年 / 146卷 / 01期
关键词
D O I
10.1049/ip-opt:19990079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The wave-guiding properties of organic semiconductor lasers operating at 630nm have been analysed. Calculations for gain-guided lasers show that single lateral mode operation can be supported in structures having active region widths of under 6 mu m, albeit with confinement highly dependent on active layer thickness, Ridge-guided structures are investigated as a means of providing single-mode operation with stable lateral confinement at high-gain values. It is shown that ridge heights of about 0.03 mu m are sufficient to provide lateral confinement of about 0.5.
引用
收藏
页码:15 / 20
页数:6
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