Preparation of nickel oxide thin films for gas sensors applications

被引:189
作者
Hotovy, I
Huran, J
Spiess, L
Hascik, S
Rehacek, V
机构
[1] Slovak Univ Technol Bratislava, Dept Microelectron, Bratislava 81219, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
[3] Tech Univ Ilmenau, Dept Mat Engn, D-98684 Ilmenau, Germany
关键词
nickel oxide; thin films; gas sensors;
D O I
10.1016/S0925-4005(99)00077-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Nickel oxide (NiO) thin films were prepared by de reactive magnetron sputtering from a nickel metal target in an Ar + O-2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15% to 45%. The films prepared in the oxide-sputtering mode were amorphous while the films in metal-sputtering mode exhibited polycrystalline (fcc) NiO phase. In this case TEM observations showed a dense fine-grained structure with the grain size in the range 4-10 nm and AFM micrograph showed a rough surface with RMS = 2.21 nm. We have found that good NiO stoichiometric films are obtainable with a polycrystalline (fcc) structure at 40% oxygen content in the metal-sputtering mode. (C) 1999 Elsevier Science S.A. All lights reserved.
引用
收藏
页码:147 / 152
页数:6
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