Adsorption kinetics of H on Si(111)7x7 by means of surface differential reflectivity

被引：27

作者：

Beitia, C ^{[1
]}

Preyss, W ^{[1
]}

DelSole, R ^{[1
]}

Borensztein, Y ^{[1
]}

机构：

[1] UNIV ROMA TOR VERGATA, DIPARTIMENTO FIS, INFM, I-00133 ROME, ITALY

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.56.R4371

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kinetics of hydrogen adsorption on Si(111)7x7 have been studied by means of real-time surface differential reflectivity. Experiments have been performed for a large exposure range and for temperature ranging from 170-370 K. Two different adsorption channels could be determined from the analysis of the spectra. The kinetics equations of the two elementary processes have been written, and their respective activation energies have been determined: a very low barrier for the H binding on the adatom dangling bonds and a barrier of about 20 meV for the H breaking of the adatom back bond. The kinetics of both processes can be understood by taking into account a large energy barrier that inhibits the adatom-back-bond breaking by H as long as the dangling bond of the adatom is not yet bound to H.

引用

页码：R4371 / R4374

页数：4

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