SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES

被引:292
作者
BOLAND, JJ
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY
关键词
D O I
10.1080/00018739300101474
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This article focuses on recent scanning tunnelling microscopy studies that have led to an improved understanding of the interaction of hydrogen with silicon surfaces. The structure and bonding of the Si(111)-7 x 7 and Si(100)-2 x 1 surfaces are described together with the adsorption and desorption of hydrogen from these surfaces. The role of hydrogen in the passivation of silicon surfaces and silicon chemical vapour deposition are also discussed.
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页码:129 / 171
页数:43
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