Effects of humidity on unencapsulated poly(thiophene) thin-film transistors

被引:59
作者
Chabinyc, ML
Endicott, F
Vogt, BD
DeLongchamp, DM
Lin, EK
Wu, YL
Liu, P
Ong, BS
机构
[1] PARC, Palo Alto, CA 94304 USA
[2] NIST, Div Polymers, Gaithersburg, MD 20899 USA
[3] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
关键词
D O I
10.1063/1.2181206
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of humidity on unencapsulated polymeric thin-film transistors (TFTs) of poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene] (PQT-12) were investigated. The field effect mobility of PQT-12 TFTs decreases and the rate of trapping of charge carriers increases under increasing humidity. The amount of water absorbed by the PQT-12 films was measured using a quartz crystal microbalance. Thin films of PQT-12 absorb comparable amounts of water to the carrier concentration in TFTs under routine operating conditions (humidity of 30% relative humidity and gate voltage of -30 V); the changes in electrical characteristics under humid atmospheres are attributed to the interaction of absorbed water with the carriers in the film. (c) 2006 American Institute of Physics.
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页数:3
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