High-performance all-polymer transistor utilizing a hygroscopic insulator

被引:95
作者
Sandberg, HGO
Bäcklund, TG
Österbacka, R
Stubb, H
机构
[1] Abo Akad Univ, Dept Phys, Turku 20500, Finland
[2] Turku Univ, Grad Sch Mat Res, Turku 20500, Finland
关键词
D O I
10.1002/adma.200400030
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The performance of organic field-effect transistors, OFETs, restricts their potential use to applications where low efficiency and short lifetimes are acceptable, although recently the field has evolved rapidly.([1,2]) Proposed applications are radio-frequency information tags, e.g., price tags and inventory labels, sensors, and simple displays.([3-6]) A simple, low-cost manufacturing process is desired, however such processes usually result in significantly lower device performance. The manufacture of state-of-the-art OFETs today([7]) normally requires the device to be processed in an inert atmosphere and to be shielded from oxygen and humidity in the air.([8]) The best organic transistors have almost reached the performance levels of amorphous silicon devices and the technology is entering the commercial stage.([9-13])
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页码:1112 / +
页数:5
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