A novel 1.3-μm high T0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

被引：1

作者：

Chen, B ^{[1
]}

Wang, W ^{[1
]}

Wang, XJ ^{[1
]}

Zhang, JY ^{[1
]}

Fan, Z ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

fiber communication; AlGaInAs/InP; distributed feedback laser diodes; complex-coupled grating; strained-compensated; LP-MOCVD;

D O I：

10.1143/JJAP.38.5096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

引用

页码：5096 / 5100

页数：5

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