Photoluminescence as a surface-effect in nanostructures

被引:16
作者
Berger, S
Schachter, L
Tamir, S
机构
[1] TECHNION ISRAEL INST TECHNOL, DEPT ELECT ENGN, IL-32000 HAIFA, ISRAEL
[2] TECHNION ISRAEL INST TECHNOL, INST MET, IL-32000 HAIFA, ISRAEL
来源
NANOSTRUCTURED MATERIALS | 1997年 / 8卷 / 02期
关键词
D O I
10.1016/S0965-9773(97)00005-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline Si powder prepared by Laser Induced CVD (LCVD) showed photoluminescence (PL) at wavelengths of 400-900 nm when excited at 488 nm and 330 nm. The powder consists of spherical grains with an average diameter of 25 nm and log-normal size distribution. In this study we present a model which explains the origin of the photoluminescence: the latter is generated by electrons which jump from the regular bulk-states into the surface-states of the nanocrystals, which in turn are not populated after being Excited by the illuminating photons. We present the effect of the surface potential on the surface states and, thus, on the possible transitions. The model is tested against experimental results which cannot be explained by the quantum size confinement effect such as photoluminescence from particles bigger than 10 rim and shift in the PL emission wavelength due to oxygen and nitrogen bonds at the surface of the particles. The tools presented here can be applied also to porous silicon.
引用
收藏
页码:231 / 242
页数:12
相关论文
共 22 条
[1]   POROUS SILICON - THE MATERIAL AND ITS APPLICATIONS IN SILICON ON INSULATOR TECHNOLOGIES [J].
BOMCHIL, G ;
HALIMAOUI, A ;
HERINO, R .
APPLIED SURFACE SCIENCE, 1989, 41-2 :604-613
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   SUPERCONDUCTIVITY IN HIGH-PRESSURE METALLIC PHASES OF SI [J].
CHANG, KJ ;
DACOROGNA, MM ;
COHEN, ML ;
MIGNOT, JM ;
CHOUTEAU, G ;
MARTINEZ, G .
PHYSICAL REVIEW LETTERS, 1985, 54 (21) :2375-2378
[4]   MICROSTRUCTURE OF VISIBLY LUMINESCENT POROUS SILICON [J].
COLE, MW ;
HARVEY, JF ;
LUX, RA ;
ECKART, DW ;
TSU, R .
APPLIED PHYSICS LETTERS, 1992, 60 (22) :2800-2802
[5]  
DELLEY B, 1993, PHYSICS REV B, V47, P47
[6]   ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THE INITIAL OXIDATION IN AIR [J].
DITTRICH, T ;
ANGERMANN, H ;
FUSSEL, W ;
FLIETNER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 140 (02) :463-470
[7]   3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].
FURUKAWA, S ;
MIYASATO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209
[8]   QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].
FURUKAWA, S ;
MIYASATO, T .
PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729
[9]   FINE PARTICLES OF SILICON .1. CRYSTAL-GROWTH OF SPHERICAL-PARTICLES OF SI [J].
IIJIMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03) :357-364
[10]   FINE PARTICLES OF SILICON .2. DECAHEDRAL MULTIPLY-TWINNED PARTICLES [J].
IIJIMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (03) :365-372